| 论文编号: | 0 |
| 第一作者所在部门: | 0 |
| 论文题目: | Study of the growth temperature measurement and control for silicon carbide sublimation |
| 论文题目英文: | |
| 作者: | Fei, Qu; He, Zhang; Han, Meng; Hui, Li; Fazhu, Ding; Hongwei, Gu |
| 论文出处: | 0 |
| 刊物名称: | Materials Science Forum, 2019, Semiconductors: Silicon Carbide and Related Materials |
| 年: | 2019 |
| 卷: | 0 |
| 期: | 0 |
| 页: | 0 |
| 联系作者: | 0 |
| 收录类别: | |
| 影响因子: | 0 |
| 摘要: | 0 |
| 英文摘要: | |
| 外单位作者单位: | 0 |
| 备注: | 0 |
Study of the growth temperature measurement and control for silicon carbide sublimation