Online Monitoring of SiC MOSFET Junction Temperature with Full-range and Gate oxide Defect Insensitivity
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论文题目: Online Monitoring of SiC MOSFET Junction Temperature with Full-range and Gate oxide Defect Insensitivity
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作者: 郑丹,温旭辉,仇志杰,李鸿扬,欧阳文远,蒋潇锋,宁圃奇,范涛
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刊物名称: PCIM Asia Shanghai Conference 2025 24.09.2025 - 26.09.2025, China
: 2025
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